极紫外光刻
抵抗
极端紫外线
平版印刷术
材料科学
同步加速器
光学
光电子学
多重图案
下一代光刻
浸没式光刻
节点(物理)
同步辐射
光刻
纳米技术
工程物理
电子束光刻
物理
声学
激光器
图层(电子)
作者
Takeo Watanabe,Tetsuo Harada,Shinji Yamakawa
标识
DOI:10.2494/photopolymer.34.49
摘要
Extreme ultraviolet lithography was started to use for the production of 7-nm node-logic-semiconductor devices in 2019. And it was adapted to use for high volume manufacturing (HVM) of 5-nm logic devices in 2020. EUVL is required to be extended to use in 1.5-nm-node-device fabrications. However, it still has many technical issues. Especially, for EUV resists, simultaneous achievement of high sensitivity and low line edge width are required. To solve the EUV resist issue, the fundamental work using synchrotron in soft X-ray region is necessary. The fundamental evaluation study of EUV resist at NewSUBARU synchrotron light facility is described in this paper.
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