深能级瞬态光谱
高电子迁移率晶体管
光电子学
材料科学
杂质
外延
肖特基二极管
活化能
肖特基势垒
异质结
阿累尼乌斯方程
图层(电子)
晶体管
硅
化学
电气工程
纳米技术
电压
物理化学
二极管
有机化学
工程类
作者
Matej Matúš,J. Drobný,J. Vadovsky,A. Kósa,P. Benko,J. Kovac,S.L. Delage,Ł. Stuchlíková
标识
DOI:10.1109/asdam50306.2020.9393839
摘要
This contribution deals with a Deep Level Transient Spectroscopy study of emission and capture processes in innovative HEMT structures based on InAlGaN/GaN, grown on N + doped SiC substrates with a SI epitaxial SiC layer and AlGaN back-barrier. Three different gate types (Schottky, FAT FET and GTLM) were examined. The attention was focused on identified deep energy levels and possible origins compared to various measurement conditions and the gate types. Arrhenius evaluations confirmed traces of Ga-vacancies, dislocations, self-donors associated with the Ga interstitial impurities. Measured DLTS spectra validated an excellent quality of the growth process.
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