Synthesis Strategies and Nanoarchitectonics for High‐Performance Transition Metal Dichalcogenide Thin Film Field‐effect Transistors

Abstract Transition metal dichalcogenides (TMDC) exhibit highly superior electrical properties and are typically obtained through mechanical exfoliation. This method has significant limitations, however, such as patterning issues and non‐uniformity, which hinder their application in integrated circuits as transistors and array pixel displays. To overcome these challenges, various large‐scale deposition methods have been developed. In this review, we introduce five major methods for TMDC deposition: chemical vapor deposition, physical vapor deposition, atomic layer deposition, pulsed laser deposition, and ink‐jet printing. An overview of each method is provided in the following order: surface analysis, electrical characteristics, and limitations of each method are discussed. Furthermore, we present three key strategies for an advanced device fabrication using the discussed deposition methods. By implementing these strategies, we can accelerate the development of highly crystalline and scalable TMDC thin films, which are essential for producing advanced electronic devices with improved performance. Owing to recent technological advancements, TMDC devices have the potential to become the leading material for next‐generation semiconductor devices. These devices can be specifically designed and optimized for innovative applications.