Dual feedback radiation-tolerant SRAM for space application

Static random access memory (SRAM) faces significant reliability challenges in radiation-prone environments, as high-energy particles can induce single-event upsets (SEUs) by disrupting stored data at sensitive nodes. In this work, we aim to design a radiation-hardened SRAM cell that can withstand harsh radiation environments in space. In order to design the DFRH_14T SRAM cells, we utilised two feedback mechanisms. Firstly, we used two crossed coupled latches with an interlocked connection, which creates positive feedback and restores the affected node value. The second method involved using two PMOS transistors controlled by a word-line signal. These transistors connect their drain and source to the internal stored nodes, generating positive feedback. Both feedback machines enable the system to withstand increased radiation levels. Additionally, in hold mode, its beta value is increasing, which helps to improve the hold noise margin. Drives by two transistors make write and read operations faster, which helps to reduce read and write delay. We address the HALF selection issue, by implemented a divided word line, which significantly enhanced the WL driving strength.