记忆电阻器
材料科学
纳米技术
电解质
肖特基势垒
记忆晶体管
光电子学
导电体
阴极
纳米尺度
柔性电子器件
灵活性(工程)
桥接(联网)
非易失性存储器
基质(水族馆)
接触电阻
电阻随机存取存储器
电极
电子工程
计算机科学
电气工程
复合材料
图层(电子)
电压
二极管
数学
物理化学
化学
计算机网络
工程类
地质学
海洋学
统计
作者
Yuan Zhu,Jiayuan Liang,M. Vairavel,Tomas Nyberg,Daniel Primetzhofer,Xun Shi,Zhen Zhang
标识
DOI:10.1021/acsami.2c02264
摘要
Flexible memristors hold great promise for flexible electronics applications but are still lacking of good electrical performance together with mechanical flexibility. Herein, we demonstrate a full-inorganic nanoscale flexible memristor by using free-standing ductile α-Ag2S films as both a flexible substrate and a functional electrolyte. The device accesses dense multiple-level nonvolatile states with a record high 106 ON/OFF ratio. This exceptional memristor performance is induced by sequential processes of Schottky barrier modification at the contact interface and filament formation inside the electrolyte. In addition, it is crucial to ensure that the cathode junction, where Ag+ is reduced to Ag, dominates the total resistance and takes the most of setting bias before the filament formation. Our study provides a comprehensive insight into the resistance-switching mechanism in conductive-bridging memristors and offers a new strategy toward high performance flexible memristors.
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