Theoretical study of highly efficient CH3NH3SnI3 based perovskite solar cell with CuInS2 quantum dot

Abstract Simulation studies have been carried out for the n–i–p perovskite solar cell (PSC) structure i.e. ITO/SnO2/CH3NH3PbI3/CuInS2/Au. We have considered this cell as our primary structure and is simulated using solar cell capacitance simulator-1D software. Here, the CuInS2 quantum dot (CIS QD) acts as an inorganic hole transporting layer. Further, the use of the CIS QD in PSCs has been explored by simulating 20 different cell structures. These PSCs are based on recently used absorber layers, i.e. MASnI3, FAPbI3, and (FAPbI3)0.97 (MAPbBr1.5Cl1.5)0.03, and electron transporting layers, i.e. SnO2, TiO2, ZnO, C60, and IGZO. The performance of all structures has been optimized by varying the thickness of the absorber layers and electron transporting layers. The cell structure, ITO/SnO2/CH3NH3SnI3/CuInS2/Au, has been found to exhibit the highest power conversion efficiency of 21.79% as compared to other cells. Investigations have also been carried out to analyze the effect of defect density in the absorber layer and the interface of the cell structure. In addition, the cell performance has been ascertained by examining the impact of operating temperature, metal contact work function and that of resistance in series as well as in parallel. The simulation results of our primary cell structure are found to be in good agreement with the recent experimental study.