Bulk Electron Accumulation LDMOS With Extended Superjunction Gate

An Extended Superjunction (SJ) Gate (ESG) Lateral Double-diffused Metal–Oxide Semiconductor (LDMOS) with full bulk electron accumulation in the drift is proposed, and the physical mechanism is investigated by the SENTAURUS. It features a Fin Gate including Planar Gate (PG) and ESG: the ESG is formed by the P-Pillar and two integrated back-to-back diodes $\text{D}_{{2}}$ and $\text{D}_{{1}}$ , then the gate potential ${V}_{\text {GS}}$ is extended through the whole P-Pillar. Additionally, the gate oxide ${W}_{\text {oxide}}$ is inserted between the P- and N-Pillars of the SJ. At the ON-state, the 3-D electron channels are produced at the P-well by the Fin Gate, and the extra bulk accumulation effect is induced at the sidewalls of the N-Pillar by the positive ${V}_{\text {GS}}$ of the ESG, which can significantly decrease the ${R}_{\mathrm{\scriptstyle {ON, SP}}}$ . At the OFF-state, the N- and P-Pillars deplete from each other through the gate oxide ${W}_{\text {oxide}}$ like the conventional SJ. The 3-D simulation results show that the BV and ${R}_{\mathrm{\scriptstyle {ON, SP}}}$ are 171 V and 0.49 $\text{m}\Omega \cdot \text {cm}^{{2}}$ , respectively. The FOM is high up to 59.6 MW/cm ² , which breaks through the silicon limit of the RESURF.