导纳
光谱学
材料科学
氧化物
欧姆接触
图层(电子)
钨
光电发射光谱学
分析化学(期刊)
化学物理
无机化学
化学
纳米技术
X射线光电子能谱
冶金
核磁共振
电气工程
物理
有机化学
电阻抗
工程类
量子力学
作者
M. Hoping,Christian Schildknecht,Hassan Gargouri,Thomas Riedl,M. Tilgner,H.‐H. Johannes,Wolfgang Kowalsky
摘要
Admittance spectroscopy is a simple yet powerful tool to determine the carrier mobility of organic compounds. One requirement is to have an Ohmic contact for charge injection. By employing a thin interfacial layer of tungsten oxide, or molybdenum oxide we have found a possibility to efficiently inject holes into organic materials with a deep highest occupied molecular orbital level down to 6.3eV. These results considerably enhance the application range of the admittance spectroscopy method. The measured data are in excellent agreement with data obtained by the time-of-flight technique.
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