发光二极管
光电子学
材料科学
半导体
二极管
氮化物
蓝光
氮化镓
带隙
宽禁带半导体
Crystal(编程语言)
纳米技术
计算机科学
图层(电子)
程序设计语言
作者
Isamu Akasaki,Hiroshi Amano
摘要
Marked improvements in the crystalline quality of GaN enabled the production of GaN-based p–n junction blue-light-emitting and violet-laser diodes. These robust, energetically efficient devices have opened up a new frontier in optoelectronics. A new arena of wide-bandgap semiconductors has been developed due to marked improvements in the crystalline quality of nitrides. In this article, we review breakthroughs in the crystal growth and conductivity control of nitride semiconductors during the development of p–n junction blue-light-emitting devices. Recent progress mainly based on the present authors' work and future prospects of nitride semiconductors are also discussed.
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