VHF-PECVD OF Ti/TiN WITH SILANE REDUCTION PROCESS

This paper presents VHF-Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD) of Ti/TiN with silne reduction process, using source. VHF plasma, which is denser than a conventional RF plasma, produces a large number of radicals. Silane reduction process, which supplies silane radicals, more promotes dissociation of Ti-Cl bond than a conventional hydrogen reduction process. therefore, the VHF-PECVD with silane reduction process forms high quality Ti/TiN films, which have low level of Cl content(cm. The surface morphology of Ti film is very smooth. The structure of TiN film is amorphous. Furthermore, excellent step coverage for the films is obtained.