Moiré-Engineered Ferroelectric Transistors for Nearly Trap-Free, Low-Power, and Nonvolatile 2D Electronics

). The device exhibits a stable non-volatile memory window of 0.10 V and high mobility, exceeding the performance of previously reported 2D FeFET and matching that of advanced silicon-based devices. In addition, capacitance-voltage spectroscopy, corroborated by self-consistent Landau-Ginzburg-Devonshire modeling, indicates ultrafast ferroelectric switching (∼0.5 μs). These results establish moiré-engineered ferroelectricity as a practical and scalable route toward ultraclean, low-power, and non-volatile 2D electronics, bridging atomistic lattice engineering with functional device architectures for next-generation memory and logic technologies.