薄膜晶体管
材料科学
无定形固体
镓
压力(语言学)
锌
弯曲
铟
晶体管
接受者
光电子学
复合材料
冶金
图层(电子)
电气工程
化学
结晶学
凝聚态物理
工程类
哲学
电压
物理
语言学
作者
Ho-Sang Lee,Kyoungah Cho,Heesung Kong,Seungjun Lee,Ji‐Eun Lim,Sangsig Kim
标识
DOI:10.35848/1347-4065/ac1c8d
摘要
In this study, we investigated the effect of repetitive mechanical stress on the electrical characteristics of amorphous indium–tin–gallium–zinc oxide (a-ITGZO) thin-film transistors (TFTs). The degradation of the electrical characteristics of an a-ITGZO TFT with a curvature radius of 2 mm is minimal even after the TFT undergoes bending 105 times. Our technology computer-aided design simulation reveals that the electrical characteristics degraded by the repeated bending cycles are due to the increase in the acceptor-like Gaussian states (NGA) related with the generation of oxygen interstitial defects.
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