铜
电镀
吸附
磺酸盐
电化学
材料科学
钠
分子动力学
化学
化学工程
复合材料
冶金
物理化学
图层(电子)
计算化学
电极
工程类
作者
Chong Wang,Jinqiu Zhang,Peixia Yang,Maozhong An
标识
DOI:10.1016/s1452-3981(23)16891-x
摘要
The adsorption behavior of thiazolinyl-S-Cu and sodium thiazolinyl- dithiopropane sulfonate(SH110) on the copper surface was investigated using molecular dynamics (MD) simulation and atomic force microscope (AFM). The electrochemical behavior of SH110 was evaluated and SH110 was used as the single additive in the through-hole (TH) electroplating. The results indicate that SH110 is an effective additive used for TH filling. Thiazolinyl-S-Cu and SH110 could be adsorbed on copper surface. The adsorption behavior of SH110 on copper surface indicates that SH110 is a combination of accelerator and inhibitor. SH110 can be used as an inhibitor at the surface with strong convection, whereas it can be used as an accelerator at the surface with weak convection. The combined approach of experiments and MD simulation can provide an insight into the mechanism of SH110 for TH filling.
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