Thermal and electrical switchable wide-anglemulti-band terahertz absorber

Multi-band terahertz (THz) absorbers have recently gained attention due to their favorable application prospects in communication, imaging, detection, and other fields. However, many multi-band THz absorbers are tuned by a single method, which limits their tuning effect. To address this issue, we propose a multi-band THz absorber that can be co-modulated by thermal and electrical methods. Our proposed absorber uses vanadium dioxide (VO2) to achieve this co-modulation. When VO2 is insulating, the frequency of the absorbing peaks originating from the lateral Fabry-Pérot resonance mode can be changed by adjusting the VO2 width. When VO2 is a conductor, the quality factor of the absorbing peak based on the inductor-capacitor resonance mode can be tuned by adjusting the width of VO2. By varying the top dielectric layer thickness, the frequency of the absorbing peaks can be tuned over a wide range. For devices with two or three layers of graphene nanoribbons-dielectric stacks, a modulation effect similar to that of varying dielectric layer thickness in a single-layer graphene device can be achieved simply by applying a 1 eV Fermi energy to graphene nanoribbons in different layers. By combining thermal and electrical modulation, the two or three-layer stacked device can be dynamically switched between four or six absorbing states, and a wider range of dynamic peak frequency modulation can be realized. Furthermore, the performance of the absorber does not deteriorate significantly at an incident angle of up to 70°. Our proposed thermal-electrical switchable wide-angle multi-band THz absorber provides a reference for the design, fabrication, and application of high-performance THz absorbers in different fields.