Cong Wang,Bing Wang,Kenneth Eng Kian Lee,Soon Fatt Yoon,Jürgen Michel
标识
DOI：10.1364/acpc.2015.as3a.3
摘要
A yellow InGaP light emitting diode (LED) emitting at 590 nm epitaxially grown on Si substrate with SiGe and GaAsP buffer layers is demonstrated. Characterizations of the epitaxy growth and device fabrication are presented.
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(2025-6-4)
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