(Invited) High-Performance 2D FETs for CMOS Circuits and 3D Integration

As silicon-based transistors approach their physical scaling limits, two-dimensional (2D) materials have emerged as promising candidates for next-generation field-effect transistors (FETs) in complementary metal-oxide-semiconductor (CMOS) circuits. This paper explores the development of high-performance 2D FETs utilizing materials such as transition metal dichalcogenides, which offer atomically thin channels and superior electrostatic control. We demonstrate how these 2D FETs can be effectively integrated into CMOS architectures, addressing key challenges in fabrication and interface engineering. Additionally, we discuss the potential of 3D integration techniques that leverage the unique stacking capabilities of 2D materials to enhance device density and performance. Our findings indicate that 2D FETs not only provide a viable path for continued device scaling but also open new opportunities for advanced 3D integrated circuits, paving the way for the next era of semiconductor technology.