Research on sensitivity simulation and optimization of SOI pressure-sensitive chip

Purpose The purpose of this study is to explore simulation-based methods for enhancing the sensitivity of pressure-sensitive chips, aiming to reduce design time and overall development costs. Design/methodology/approach First, the factors influencing the sensitivity of Silicon On Insulator (SOI) pressure-sensitive chips are analyzed. These factors primarily include the crystal orientation of the chip material, impurity concentration, the position of the piezoresistor on the chip surface and the dimensions of the piezoresistor grid. An analysis model of the SOI pressure-sensitive chip is then established using COMSOL simulation software. Through electromechanical coupling simulations, sensitivity data under various parameters are obtained, with the factors affecting sensitivity serving as model adjustment parameters. The main parameters influencing the sensitivity of SOI pressure-sensitive chips and their respective range values are summarized. Findings A simulation method is developed to study the influence of crystal orientation, doping concentration, piezoresistor position and size on the sensitivity. The simulation results from the typical model align well with theoretical predictions, demonstrating that the method presented in this paper can effectively optimize sensitivity design during the design phase of pressure-sensitive chips. Originality/value This paper summarizes the factors affecting the sensitivity of SOI pressure-sensitive chips, presents a simulation model and method for optimizing pressure-sensitive chip design and simulates the optimal parameter ranges to enhance sensitivity.