窄带
有机发光二极管
电致发光
量子效率
共发射极
荧光
光致发光
系统间交叉
量子产额
原子物理学
材料科学
光电子学
物理
纳米技术
光学
图层(电子)
激发态
单重态
作者
Zhuang Cheng,Futong Liu,Liang Wan,Yin Hu,Xiaobo Ma,Yangze Xu,Zihan Su,Ping Lü
标识
DOI:10.1021/acs.jpcc.4c04343
摘要
Organic light-emitting diodes (OLEDs) based on multiresonance-induced thermally activated delayed fluorescent (MR-TADF) materials are revolutionizing the field of organic electroluminescence and are expected to be the next-generation ultrahigh definition display technology. The rapid reverse intersystem crossing (RISC) process of the TADF emitter is crucial for achieving high-performance OLEDs with low-efficiency roll-off. Here, we present a novel B–N framework-based MR-TADF emitter, Cz-2PTz-BN, which exhibits a narrow full width at half maxima of 37 nm in toluene and a high photoluminescence quantum yield (PLQY) of 93% in a doped film. The introduced sulfur atoms in Cz-2PTz-BN enhance its spin–orbital couplings (SOC) and accelerate the RISC process. The corresponding OLED demonstrates the maximum external quantum efficiency (EQEmax) of 28.7% with low roll-off, maintaining EQEs of 27.2 and 20.8% even at brightnesses of 100 and 1000 cd m–2 without a sensitizer. These outcomes indicate the promise of this molecular design strategy to obtain OLEDs with ultrahigh color purity and efficiency.
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