Threshold Voltage Recovery Time Measurement Technique Post VTH Instability in Normally-Off p-Gate GaN High Electron Mobility Transistors

In this study, we propose a simple measurement technique to quantitatively measure the time taken by threshold voltage of normally-off p-GaN AlGaN/GaN HEMTs to recover from a nominal operational gate stress-induced instability. The proposed technique eliminates the requirement to perform a full transfer characteristic sweep post-stress, thereby eliminating the measurement-induced instability effect, often colluding precise recovery time measurement. The rate of recovery and extracted recovery times hold significance in empirically correlating the location of traps in the p-GaN or AlGaN barrier region causing VTH instability. The gate of the HEMT is stressed at nominal operational drive voltages 1.5 V, 2 V, and 4 V for various time intervals from 500 μs to 100 s, and the time taken for the drain current to recover to prestress levels measured at near-threshold voltage (~1.1 VTH) is measured as the threshold voltage recovery time. With increasing gate stress voltages, 2DEG gets trapped at relatively deeper trap energy levels at the AlGaN/GaN interface requiring more emission time during the process of recovery, mandating larger recovery times. At higher stress voltage of 4 V, the Schottky gate leakage current is high enough enabling injected holes to cross the AlGaN barrier and counter-compensate for the deeply trapped 2DEG, requiring relatively the same recovery times as lower stress voltages where the gate leakage is negligibly small. With increasing stress time, the amount of 2DEG trapped increases, requiring more recovery time to de-trap and beyond a certain time, saturation of the trap density occurs causing the recovery time to plateau.