Carbon precipitation in silicon: Why is it so difficult?
硅
降水
碳纤维
过饱和度
材料科学
氧气
化学
冶金
复合材料
物理
复合数
气象学
有机化学
作者
William J. Taylor,T. Y. Tan,U. Gösele
出处
期刊:Applied Physics Letters [American Institute of Physics] 日期:1993-06-21卷期号:62 (25): 3336-3338被引量:55
标识
DOI:10.1063/1.109063
摘要
It is well-established that oxygen precipitation in silicon occurs readily and is further facilitated by the presence of carbon. In contrast, carbon precipitation in silicon appears to be a difficult process which takes place only in the presence of a sufficiently high supersaturation of oxygen or silicon self-interstitials. It is suggested that a high interface energy of carbon precipitates in conjunction with the volume decrease associated with carbon precipitation or agglomeration allows one to understand the precipitation behavior of carbon in silicon.