Position and density control of nitrogen-vacancy centers in diamond using micropatterned substrate for chemical vapor deposition
作者
Tomohiro Gomi,Syuhei Tomizawa,Kohei Ohashi,Kohei M. Itoh,Junko Ishi‐Hayase,Hideyuki Watanabe,Hitoshi Umezawa,Shinichi Shikata
标识
DOI:10.1109/cleopr.2013.6600127
摘要
We demonstrate a promising technique to control the position and density of nitrogen-vacancy (NV) centers in diamond thin film grown on a diamond substrate using nitrogen-doped isotopically-purified chemical vapor deposition (CVD). We succeed in control of the lateral position and density of NV centers doped in diamond thin film utilizing a micropatterned diamond substrate for nitrogen-doped isotopically-purified CVD diamond growth.