钝化
材料科学
钙钛矿(结构)
光电子学
量子效率
微晶
二极管
发光二极管
纳米技术
化学工程
图层(电子)
工程类
冶金
作者
Zema Chu,Qiufeng Ye,Yang Zhao,Fei Ma,Zhigang Yin,Qizhou Zhang,Jingbi You
标识
DOI:10.1002/adma.202007169
摘要
Abstract Perovskite light‐emitting diodes (PeLEDs) are considered as particularly attractive candidates for high‐quality lighting and displays, due to possessing the features of wide gamut and real color expression. However, most PeLEDs are made from polycrystalline perovskite films that contain a high concentration of defects, including point and extended imperfections. Reducing and mitigating non‐radiative recombination defects in perovskite materials are still crucial prerequisites for achieving high performance in light‐emitting applications. Here, ethoxylated trimethylolpropane triacrylate (ETPTA) is introduced as a functional additive dissolved in antisolvent to passivate surface and bulk defects during the spinning process. The ETPTA can effectively decrease the charge trapping states by passivation and/or suppression of defects. Eventually, the perovskite films that are sufficiently passivated by ETPTA make the devices achieve a maximum external quantum efficiency (EQE) of 22.49%. To our knowledge, these are the most efficient green PeLEDs up to now. In addition, a threefold increase in the T 50 operational time of the devices was observed, compared to control samples. These findings provide a simple and effective strategy to make highly efficient perovskite polycrystalline films and their optoelectronics devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI