Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

In this work, we demonstrate hydride vapor phase epitaxy (HVPE) of Al_xGa_1-xAs, Al_xIn_1-xP, and Al_xGa_yIn_1-x-yP using an AlCl₃ precursor. We study the growth of the Al_xGa_1-xAs alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl₃. Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of Al_xGa_1-xAs, and for the first time by HVPE, Al_xIn_1-xP and Al_xGa_yIn_1-x-yP. Finally, these results create exciting implications for HVPE-grown high-efficiency III-V solar cells and devices with reduced cost.