Effect of ramping up rate on end of range defect in multielement molecular-ion (CH3O)-implanted silicon wafers

The dependence of the density of CH3O ion-implantation defects on ramping up rate after annealing at 1100 °C for 300 s have been investigated using rapid thermal annealing. We found that the density of defects after annealing was highest at a ramping up rate of 15 °C s−1. Furthermore, we also found that the diffusion behavior of implanted carbon and oxygen which were gettered by the CH3O ion-implantation defects, was dependent on the annealing temperature. Therefore, the ramping up rate dependence of the density of CH3O ion-implantation defects was considered to be caused by the difference between the formation behavior of CH3O ion-implantation defects and the dissociative adsorption behavior of carbon and oxygen. An increase in the defect density led to an increase in the density of gettering sinks. The gettering capability of the CH3O ion-implantation region is expected to be improved by optimizing the ramping up rate.