Effect of deep level defects on CdZnTe detector internal electric field and device performance

Cadmium zinc telluride (CZT) is an ideal material for room temperature nuclear radiation detection, but CZT crystals of high quality and low defects concentration are difficult to obtain. Therefore, in order to improve the performance of the CZT detector, the working conditions of the CZT detector could be appropriately changed to make the internal electric field of the CZT detector close to uniform distribution so as to improve the electron transport performance. In this paper, alpha induced transient charge analysis has been used to study the internal electric field of the CZT detector, and deep level defects in CZT were linked with internal electric field distribution. Based on the process, a variety of deep level defects on electron trapping and detrapping by changing the temperature, the output waveform change of charge sensitive preamplifier (the pulse height spectra for alpha radiation at different temperatures) was observed, and then the effects of deep level defects on electron mobility (μe), electron transport time (TR), the internal electric field, and the electron collection efficiency of the CZT detector were analyzed. The experimental results indicated that the influence of deep level defects was a main factor to the internal electric field in the range of −140 to 40 °C. As the temperature rises, the influence of these defects weakens, μe and electron collection efficiency both increase, and internal electric field distribution tends to be uniform. Moreover, with the further increasing temperature (−40 to 20 °C), μe decreased and internal electric field distribution became fluctuating, but electron collection efficiency was basically unchanged, which suggested that the influence of lattice vibration in the range of −40 to 20 °C turned to be the main factor. The above conclusions demonstrated that although the CZT detector has excellent room temperature detection ability, room temperature was not its optimal working temperature due to the influence of high concentration deep level defects. At −20 °C, the CZT detector presented the highest electron collection efficiency and maximum which limited the influence of deep level defects on electron transport, performing the optimal properties.