Effect of Intrinsic Defects on the Photoluminescence of Pristine and Doped CsPbBr3 Perovskite

We report the experimental results demonstrating the effect of either photoinduced or doping-induced intrinsic defects on excitonic photoluminescence in both pristine and doped CsPbBr3 halide perovskite. It is shown that an increase in the number of intrinsic defects leads to stronger photoluminescence quenching, which is confirmed by the direct negative correlations between the absorption of the intrinsic defects and excitonic luminescence intensity. The proposed mechanism indicates that the excitonic luminescence quenching originates from the exciton decay at the intrinsic defect sites. The efficiency of the exciton decay depends on the type and charge of the cations located near the defect sites and increases in the order Ag+ < Pb2+ < Bi3+.