Novel 2D MXene-based materials in memristors: Fundamentals, resistive switching properties and applications

As the fourth kind of passive device, memristors possess the advantages of non-volatile storage, high performance, low power consumption, fast switching speed and many other storage characteristics, making it one of the most potential new biomimetic electronic synaptic devices and be able to provide the possibility of data storage for high-throughput brain-like computing. Novel two-dimensional (2D) layered MXene materials have attracted extensive attention and research because of their advantages such as large size of lamellas, high ion mobility, good electrical conductivity, high mechanical toughness, tunable electronic properties and surface characteristics. In this article, the latest research progress in synthesis of MXene materials, structure design of MXene-based resistance layer, device performance optimization, resistive switching mechanism and data storage applications based on MXene is well reviewed. The effects of elaborated material structure and device structure based on MXene on the resistance performance of the memristor are carefully discussed in detail. Finally, the research gap of MXene-based memristor and the urgent demand to deeply explore its resistive switching mechanism are amply described, keenly expecting that the research of MXene-based storage devices can develop rapidly and integrate with other device characteristics and meet the actual requirements of information storage in the near future.