硫族元素
纳米材料
量子点
纳米片
化学计量学
纳米技术
材料科学
过渡金属
水溶液
化学
催化作用
物理化学
结晶学
生物化学
作者
Xianguang Ding,Fei Peng,Jun Zhou,Wenbin Gong,Slaven Garaj,Kian Ping Loh,Chwee Teck Lim,David Tai Leong
标识
DOI:10.1038/s41467-018-07835-1
摘要
Transition metal dichalcogenide (TMD) quantum dots (QDs) are fundamentally interesting because of the stronger quantum size effect with decreased lateral dimensions relative to their larger 2D nanosheet counterparts. However, the preparation of a wide range of TMD QDs is still a continual challenge. Here we demonstrate a bottom-up strategy utilizing TM oxides or chlorides and chalcogen precursors to synthesize a small library of TMD QDs (MoS2, WS2, RuS2, MoTe2, MoSe2, WSe2 and RuSe2). The reaction reaches equilibrium almost instantaneously (~10-20 s) with mild aqueous and room temperature conditions. Tunable defect engineering can be achieved within the same reactions by deviating the precursors' reaction stoichiometries from their fixed molecular stoichiometries. Using MoS2 QDs for proof-of-concept biomedical applications, we show that increasing sulfur defects enhanced oxidative stress generation, through the photodynamic effect, in cancer cells. This facile strategy will motivate future design of TMDs nanomaterials utilizing defect engineering for biomedical applications.
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