Split-Dummy-Active CSTBT™ for Improving Recovery dV/dt and Turn-on Switching Loss Tradeoff

IGBTs have the special trade-off between recovery dV/dt and turn-on switching loss. In this study, we propose the split-dummy-active CSTBT™ with the intentionally increased gate-collector capacitance for the first time, and experimentally demonstrate its impact on the trade-off. The proposed structure successfully realized advanced improvement in the trade-off by 46%.