The Characterization of CdS Thin Film Prepared by CBD Method
作者
Peng Cao,Ping Fan,Guang Xing Liang,Zhuanghao Zheng,Dong Ping Zhang,Xing Min Cai,Jing Rong
出处
期刊:Advanced Materials Research [Trans Tech Publications] 日期:2012-06-14卷期号:538-541: 88-91
标识
DOI:10.4028/www.scientific.net/amr.538-541.88
摘要
CdS thin film was deposited onto glass substrates by the chemical bath deposition. The deposition temperature was maintained at 75 °C. The crystal structure, surface morphology, optical and electrical properties have investigated employing X-ray diffraction (XRD), scanning electron microscopy (SEM), spectrophotometer and seeback coefficient measurement, respectively. The XRD reveals CdS thin film grown at 75 °C has the mixed hexagonal and cubic structure. The optical band gap energy is 2.4 eV. The seeback coefficient is 197.3μV/k at room temperature. The electric resistivity of CdS thin film is in the order of 10000Ω•cm.