Process variation aware OPC with variational lithography modeling

Optical proximity correction (OPC) is one of the most widely used resolution enhancement techniques (RET) in nanometer designs to improve subwavelength printability. Conventional model-based OPC assumes nominal process parameters without considering process variations, due to prohibitive runtimes of lithography simulations across process windows. This is the first paper to propose a true process-variation aware OPC (PV-OPC) framework. It is enabled by the variational lithography modeling and guided by the variational edge placement error (V-EPE) metrics. Due to the analytical nature of our models, our PV-OPC is only about 2-3 /spl times/ slower than the conventional OPC, but it explicitly considers the two main sources of process variations (dosage and focus) during OPC. Thus our post PV-OPC results are much more robust than the conventional OPC ones, in terms of both geometric printability and electrical characterization under process variations.