Development of silicon recrystallization and thin-film solar cell processes. Third quarterly technical status report, April 1-June 30, 1978

This report reviews the rationale for selection of the two-step recrystallization process that is being developed, presents the results of the latest first-step recrystallization experiments, and outlines the calculations appropriate to the design of second-step thermal process experiments. Results of a computer run for first-step recrystallization are also presented. The report concludes with an updating of the results obtained from the thermal and pulsed electron beam annealing of shallow implanted GaAs.