拓扑绝缘体
声子
凝聚态物理
准粒子
超快电子衍射
飞秒
声子散射
放松(心理学)
激发态
物理
材料科学
原子物理学
量子力学
激光器
超导电性
社会心理学
心理学
作者
Yueying Hou,Linze Li,Sutao Sun,Gan Liu,Hongyuan Zhao,Zhiheng Chen,Xuemei Yan,Yang‐Yang Lv,Yurong Yang,Shu‐Hua Yao,Jian Zhou,Y. B. Chen,Ming‐Hui Lu,Vitalyi E. Gusev,Yan‐Feng Chen
标识
DOI:10.1002/advs.202504798
摘要
Abstract The transition metal pentatelluride ZrTe 5 exhibits rich lattice‐sensitive topological electronic states, and demonstrates great potential in photoelectric and thermoelectric devices. However, a comprehensive investigation of electron‐phonon coupling and phonon scattering process remains limited, despite their importance for transport properties and device optimization. Here, the hot carrier dynamics and a 1.15 THz A g mode coherent phonon in ZrTe 5 are investigated by femtosecond transient spectroscopy across 10–300 K. Notably, polarization‐dependent measurements explicitly decouple a strong anisotropic transient response, which is attributed to the effects of excited‐state electron relaxation and reflectivity modulation by displacive excited coherent phonons. The temperature dependence of electron relaxation time in ZrTe 5 shows an inflection point, first offering the ultrafast dynamical signature of a temperature‐driven Lifshitz transition. At low temperatures, a long‐lived electron relaxation component emerges in the transient response, providing possible evidence of topological surface states in ZrTe 5 . In addition, the temperature‐dependent coherent phonon is also analyzed, revealing that its scattering is dominated by three‐phonon interactions and exhibits a relatively long lifetime compared to other modes. This work deepens the understanding of ultrafast processes in ZrTe 5 , resolves longstanding questions, paves the way for studying electronic phase transitions, and advances ZrTe 5 's application in optoelectronic and quantum devices.
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