Sub-5 nm monolayer KMgX (X = P, As, Sb)-based homogeneous CMOS devices for high-performance applications

Sub-5 nm monolayer KMgX (X = P, As, Sb) MOSFETs possess ultrahigh ON-state current and a high level of symmetry between n- and p-type devices, beneficial to the development of homogeneous CMOS.