透视图(图形)
计量学
工程伦理学
系统工程
纳米技术
工程类
工程物理
计算机科学
材料科学
物理
光学
人工智能
作者
Umberto Celano,Daniel Schmidt,C. Beitia,George Orji,Albert V. Davydov,Yaw S. Obeng
出处
期刊:Nanoscale advances
[Royal Society of Chemistry]
日期:2024-01-01
卷期号:6 (9): 2260-2269
被引量:10
摘要
The International Roadmap for Devices and Systems (IRDS) predicts the integration of 2D materials into high-volume manufacturing as channel materials within the next decade, primarily in ultra-scaled and low-power devices. While their widespread adoption in advanced chip manufacturing is evolving, the need for diverse characterization methods is clear. This is necessary to assess structural, electrical, compositional, and mechanical properties to control and optimize 2D materials in mass-produced devices. Although the lab-to-fab transition remains nascent and a universal metrology solution is yet to emerge, rapid community progress underscores the potential for significant advancements. This paper reviews current measurement capabilities, identifies gaps in essential metrology for CMOS-compatible 2D materials, and explores fundamental measurement science limitations when applying these techniques in high-volume semiconductor manufacturing.
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