First Demonstration of High-Temperature Reliability on La:HZO-La:In2O3 FeFET With High Endurance of 1010 at 125 °C

In this letter, we demonstrate 8 nm and 5 nm lanthanum-doped$Hf_{{0}.{5}}$$Zr_{{0}.{5}}$O2 (La:HZO) films with excellent ferroelectric and robust reliability at high temperature for the first time. A low saturated operating voltage of 1.2 V and high breakdown field of 9 MV/cm are obtained in 5 nm La:HZO films at the same time. A high endurance of${3}\times {10} ^{{11}}$at room temperature and$10^{{10}}$at high temperature of$125~^{\circ }$C is obtained in 5 nm La:HZO films, owing to the superior low Eop/Ebd. Furthermore, we demonstrate a top-gate FeFET on La:In2O3 channel with a channel length of 50 nm, demonstrating superior high endurance of${3}\times {10} ^{{11}}$with a memory window (MW) of 0.9 V at room temperature and$10^{{10}}$with a memory window of 0.9 V at high temperature of$125~^{\circ }$C. Besides, our FeFETs exhibit excellent retention exceeding 10 years at$125~^{\circ }$C, showing the great potential of La:HZO for high-reliability ferroelectric applications.