Unraveling Threshold Voltage Instability in Ferroelectric Junctionless FETs Using Low-Frequency Noise Measurement With Base Bias

This study proposes a novel low-frequency noise (LFN) measurement method to investigate the origin of threshold voltage ( ${V}_{\text {th}}{)}$ instability in junctionless ferroelectric field-effect transistors (JL FeFETs). It is found that different types of traps (ferroelectric (FE) / dielectric (DE) interface trap, FE bulk trap, and DE bulk trap) are responsible for the ${V}_{\text {th}}$ instability depending on the delay time ( ${t}_{\text {D}}{)}$ and the number of program/erase cycles.