放大器
功率(物理)
功率密度
功率增益
电气工程
功率增加效率
功率带宽
射频功率放大器
瓦特
材料科学
数据库管理
光电子学
发电
电压
物理
工程类
CMOS芯片
量子力学
作者
Bharath Cimbili,Christian Friesicke,F. van Raay,Sandrine Wagner,Mingquan Bao,R. Quay
标识
DOI:10.1109/pawr56957.2023.10046243
摘要
This paper presents a 3-stage E-band (71–83 GHz) power amplifier (PA) that employs a compact low-loss distributed matching network (DMN), which performs both the output matching and power combining. As a result of this, the measured PA achieves an output power of 30.4 dBm ± 0.9 dB (1.12 W ± 0.23 W) across the band. The PA achieves a peak output power of 1.35 W with a power-added efficiency (PAE) of 20.8% and a power gain of 16.3 dB at 78 GHz. The associated power density is 1.87 W/mm. When biased with 10V supply voltage, a peak PAE of 25% is reached. To the best of the authors’ knowledge, the peak PAE with the power gain and associated power density are the highest values reported in GaN technologies at E-band.
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