Infrared Photodetectors: Extrinsic Photoconduction Induced Short‐Wavelength Infrared Photodetectors Based on Ge‐Based Chalcogenides (Small 4/2021)

The cover shows the extrinsic photoconduction induced Ge-based polarization-sensitive photodetector. The structure of the Ge-based photodetector is shown in the upper left corner. The amplified crystal structure of GeSe with several Ge vacancies is shown in the middle. Additionally, the image of excess carriers being excited by a polarized light is shown in the lower right corner. In article number 2006765, Qing Li, Zhongming Wei, Weida Hu, and co-workers investigate the extrinsic photoconduction effect in 2D materials for the first time and provide a strategy to broaden the detection waveband of photodetectors.