Control of the Uniformity in Axial Oxygen Concentration in Czochralski Silicon Crystal Growth

In this paper,the methods of controlling oxygen concentration at seed end and uniformity in axial oxygen concentration in Czochralski silicon ingots are given concerning protection atomosphere\,hot zone\,crucible material\,crucible position\,crucible rotation\,crystal rotation and programmed variation of pulling parameters.This paper emphasizes in the programmed variation of parameters for the control of uniformity in axial oxygen concentration.\;