材料科学
分子束外延
凝聚态物理
薄膜
相变
异质结
电场
光电子学
焦耳加热
电荷密度波
外延
相(物质)
纳米技术
图层(电子)
复合材料
量子力学
物理
超导电性
有机化学
化学
作者
Xingyuan Ma,Decheng Tian,Shuai Dang,Shiyang Kang,Xuexian Chen,Wenqi Zhou,Gaili Wang,Hongwei Li,Ping Hu,Zhan He,Yue Sun,Dan Li,Fangming Yu,Xiang Zhou,Huanjun Chen,Xinman Chen,Shuxiang Wu,Shuwei Li
标识
DOI:10.1021/acsami.8b21442
摘要
Charge density wave (CDW) as a novel effect in two-dimensional transition metal dichalcogenides (TMDs) has obtained a rapid rise of interest for its physical nature and potential applications in oscillators and memory devices. Here, we report var der Waals epitaxial growth of centimeter-scale 1T-VTe2 thin films on mica by molecular beam epitaxy. The VTe2 thin films showed sudden resistance change at temperatures of 240 and 135 K, corresponding to two CDW phase transitions driven by temperature. Moreover, the phase transitions can be driven by an electric field due to local Joule heating, and the corresponding resistance states are nonvolatile and controllable, which could be applied to the memory device where the logic states can be switched by an electric field. The multistage CDW phase transitions in the VTe2 thin films could be contributed to electron–phonon coupling in the two-dimensional VTe2, which is supported by twice pronounced Raman blue shifts of the vibration modes associated with in-plane phonons at CDW phase transition temperature. The results open up a new platform for understanding the microscopic physical essence and electrical control of CDW phases of TMDs, expanding the functionalities of these materials for memory applications.
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