A split gate vertical GaN power transistor with intrinsic reverse conduction capability and low gate charge

In this work, a vertical normally-off GaN device featuring split-gate with intrinsic reverse conduction (RCVFET) functionality and low gate capacitance is proposed and studied by simulation. Different from the lateral AlGaN/GaN HEMT, the RC characteristics of the proposed RCVFET are independent with the threshold voltage of the device, while a low V _{R, ON} of 0.8 V is obtained. Owing to the split-gate design, the gate charge is respectably reduced that is beneficial for improving the switching speed of the RCVFET. The device exhibits a low Ron of 0.93 mΩ.cm ² and a BV of 1280V. The reverse recovery time is 13ns. The Q _GD is 80 nC that is only one fifth of that obtained in the reference device without split-gate.