材料科学
杂质
电压
凝聚态物理
偏压
物理
量子力学
作者
Shinji Nonoyama,H. Itoh,Akira Oguri,Jun–ichiro Inoue,P. Bruno
标识
DOI:10.1016/s0304-8853(98)01052-x
摘要
Transport phenomena through a ferromagnetic tunneling junction in the presence of magnetic impurities are investigated at a nite bias voltage. We have found that the feature of the reduction of the tunnel magnetoresistance (TMR) with increasing bias voltage changes by the impurity e!ect. ( 1999 Elsevier Science B.V. All rights reserved.
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