材料科学
外延
光电子学
化学气相沉积
紫外线
兴奋剂
六方晶系
电阻率和电导率
图层(电子)
金属有机气相外延
模板
六方氮化硼
电导率
光子学
相(物质)
二极管
纳米技术
结晶学
化学
石墨烯
工程类
物理化学
有机化学
电气工程
作者
S. Majety,J. Li,X. K. Cao,R. Dahal,B. N. Pantha,J. Y. Lin,H. X. Jiang
摘要
Recent advances in epitaxial growth and demonstration of p-type conductivity in hexagonal boron nitride (hBN) epilayers represent an exceptional opportunity to revolutionize p-layer approach and overcome the intrinsic problem of low p-type conductivity in Al-rich AlGaN for deep ultraviolet (DUV) device applications. Nevertheless, the ability of epitaxial growth of hBN on AlGaN is a prerequisite for the incorporation of p-type hBN in AlGaN DUV device structures. We report on the epi-growth of hBN on Al-rich AlGaN/AlN/Al2O3 templates using metal organic chemical vapor deposition. X-ray diffraction measurement revealed a 2θ peak at 26.5° which indicates that the BN epilayers are hexagonal and consist of a single phase. Mg doped hBN epilayers were also grown on highly insulating AlN and n-type AlGaN templates with an attempt to demonstrate hBN/AlGaN p-n junctions. Mg doped hBN epilayers grown on insulating templates were p-type with an in-plane resistivity of ∼2.3 Ω cm. Diode behavior in the p-n structures of p-hBN/n-AlxGa1−xN (x ∼ 0.62) has been demonstrated. The results here reveal the feasibility of using highly conductive p-type hBN as an electron blocking and p-contact layers for AlGaN deep UV emitters.
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