Photo-CVD of Tantalum Oxide Film from Pentamethoxy Tantalum for VLSI Dynamic Memories

Recent VLSI requires materials with high dielectric constant in order to reduce their storage capacitor areas. We attempted to form a tantalum oxide film from Ta(OCH 3 ) 5 at a low temperature by photo-CVD method. Our evaluation shows that the photo-CVD film obtained in this study has good step coverage, high dielectric constant (20–24), and low leakage current, and is superior to the thermal-CVD film in various characteristics.