系统间交叉
电致发光
有机发光二极管
光电子学
材料科学
荧光
兴奋剂
消灭
自发辐射
放大自发辐射
激光器
光化学
二极管
化学
原子物理学
光学
纳米技术
单重态
物理
激发态
图层(电子)
量子力学
作者
Dongyang Chen,Junyi Gong,Jeannine Grüne,Tomas Matulaitis,Alexander J. Gillett,Xiaohong Zhang,Ifor D. W. Samuel,Graham A. Turnbull,Eli Zysman‐Colman
标识
DOI:10.26434/chemrxiv-2024-pp22n
摘要
Thermally activated delayed fluorescence (TADF) materials are expected to address triplet-related losses in electrically driven organic lasers, as the electrically generated triplets in the materials can be converted to radiative singlets through reverse intersystem crossing (RISC). This offers a way to bypass triplet absorption and annihilation in organic semiconductor lasers (OSLs). In this work we present two versatile TADF emitters 4tCzPz and 4αCbPz for application in OLEDs and OSLs. Both emitters possess moderately high ΔEST (~0.30 eV) and show high ΦPL in solution and solid state and prominent stimulated emission features in solution. Films of 4tCzPz and 4αCbPz doped in mCBP show an amplified spontaneous emission (ASE) threshold of 41.0 and 44.9 µJ/cm2, respectively. The OLEDs with 4tCzPz and 4αCbPz emitted with peak wavelengths of 492 nm and 475 nm, respectively, and showed corresponding maximum external quantum efficiencies, EQEmax, of 24.6 and 21.3%. Our research shows that D-A TADF materials hold significant potential not only as emitters for OLEDs but also in OSLs.
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