Enhancing Manufacturability of SU-8 Piezoelectric Composite Films for Microsystem Applications

可制造性设计 微系统 材料科学 压电 复合数 纳米技术 复合材料 工程类 机械工程
作者
Irma Rocio Vazquez,Zeynel Güler,Nathan Jackson
出处
期刊:Micromachines [Multidisciplinary Digital Publishing Institute]
卷期号:15 (3): 397-397 被引量:5
标识
DOI:10.3390/mi15030397
摘要

Piezoelectric thin films are extensively used as sensing or actuating layers in various micro-electromechanical systems (MEMS) applications. However, most piezoelectrics are stiff ceramics, and current polymer piezoelectrics are not compatible with microfabrication due to their low Curie Temperature. Recent polymer-composite piezoelectrics have gained interest but can be difficult to pattern. Photodefinable piezoelectric films could resolve these challenges by reducing the manufacturability steps by eliminating the etching process. But they typically have poor resolution and thickness properties. This study explores methods of enhancing the manufacturability of piezoelectric composite films by optimizing the process parameters and synthesis of SU-8 piezo-composite materials. Piezoelectric ceramic powders (barium titanate (BTO) and lead zirconate titanate (PZT)) were integrated into SU-8, a negative epoxy-based photoresist, to produce high-resolution composites in a non-cleanroom environment. I-line (365 nm) light was used to enhance resolution compared to broadband lithography. Two variations of SU-8 were prepared by thinning down SU-8 3050 and SU-8 3005. Different weight percentages of the piezoelectric powders were investigated: 5, 10, 15 and 20 wt.% along with varied photolithography processing parameters. The composites’ transmittance properties were characterized using UV-Vis spectroscopy and the films’ crystallinity was determined using X-ray diffraction (XRD). The 0–3 SU-8/piezo composites demonstrated resolutions < 2 μm while maintaining bulk piezoelectric coefficients d33 > 5 pm V−1. The films were developed with thicknesses >10 μm. Stacked layers were achieved and demonstrated significantly higher d33 properties.
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