X射线光电子能谱
溅射
氩
仿形(计算机编程)
材料科学
离子
分析化学(期刊)
光谱学
化学
计算机科学
纳米技术
原子物理学
薄膜
环境化学
物理
化学工程
工程类
有机化学
操作系统
量子力学
作者
Alexander G. Shard,Mark Baker
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:2024-07-22
卷期号:42 (5)
被引量:20
摘要
Ion beams are used in x-ray photoelectron spectroscopy (XPS) to clean samples and perform compositional sputter depth profiles. The purpose of this article is to compile good practice, recommendations, and useful information related to the use of argon ion sources for inexperienced users of XPS instrumentation. The most used type of ion source generates monoatomic argon ions at a range of energies from a fixed direction relative to the instrument. The angle and direction of the ion beam with respect to the surface are normally altered by manipulating the sample, and this may involve tilting the sample to change the angle of incidence or rotating the sample to change the azimuthal incidence angle. Atomic argon ion beams cause damage to the structure of the material surface, which may exhibit itself as a change in stoichiometry or topography as well as the implantation of argon atoms. Therefore, caution is required in the interpretation of XPS depth profiles. Gas cluster ion sources offer new possibilities and choices to XPS users. Gas cluster sources enable the sputtering of organic materials with high yield in comparison to inorganic materials and offer the potential for nearly damage-free depth profiling of delicate organic materials as well as low damage cleaning of inorganic materials. It may be possible to use argon clusters to reduce damage during the depth profiling of inorganic materials, but there is currently insufficient evidence to make any general recommendations.
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