神经形态工程学
材料科学
横杆开关
记忆电阻器
量子隧道
非易失性存储器
电子线路
纳秒
光电子学
纳米技术
计算机科学
人工神经网络
电子工程
电气工程
物理
激光器
工程类
电信
光学
机器学习
作者
Zelin Ma,Jun Ge,Wanjun Chen,Xucheng Cao,Shanqing Diao,Haiming Huang,Zhiyu Liu,Weiliang Wang,Shusheng Pan
标识
DOI:10.1021/acsami.2c14809
摘要
Although experimental implementations of memristive crossbar arrays have indicated the potential of these networks for in-memory computing, their performance is generally limited by an intrinsic variability on the device level as a result of the stochastic formation of conducting filaments. A tunnel-type memristive device typically exhibits small switching variations, owing to the relatively uniform interface effect. However, the low mobility of oxygen ions and large depolarization field result in slow operation speed and poor retention. Here, we demonstrate a quantum-tunneling memory with Ag-doped percolating systems, which possesses desired characteristics for large-scale artificial neural networks. The percolating layer suppresses the random formation of conductive filaments, and the nonvolatile modulation of the Fowler-Nordheim tunneling current is enabled by the collective movement of active Ag nanocrystals with high mobility and a minimal depolarization field. Such devices simultaneously possess electroforming-free characteristics, record low switching variabilities (temporal and spatial variation down to 1.6 and 2.1%, respectively), nanosecond operation speed, and long data retention (>104 s at 85 °C). Simulations prove that passive arrays with our analog memory of large current-voltage nonlinearity achieve a high write and recognition accuracy. Thus, our discovery of the unique tunnel memory contributes to an important step toward realizing neuromorphic circuits.
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