Radiation Hardened by Design RF Circuits Implemented in 0.13 $\mu$m CMOS Technology

Two important RF building blocks, a low noise amplifier and a voltage-controlled oscillator, were designed and fabricated in a 0.13 mum CMOS process using radiation-hardened by design techniques. Both circuits exhibit only minimal degradation with total dose when the parts are irradiated up to 500 krad (SiO ₂ ). Laser beam testing results indicate that the output spectrum of the two circuits has no noticeable change with laser energy up to 200 pJ